(China (Mainland))
Product Summary
The MBN1200D33A is an IGBT module with high speed and low noise.
Parametrics
MBN1200D33A absolute maximum ratings: (1)Collector-Emitter Voltage: 3,300 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current DC: 1,200 A; (4)Forward Current DC: 1,200 A; (5)Collector Power Dissipation: 12,000 W; (6)Junction Temperature: -40 ~ +125 ℃; (7)Storage Temperature: -40 ~ +125 ℃; (8)Isolation Voltage: 5400 VRMS (AC 1minute) ; (9)Screw Torque Terminals (M4/M8): 2/10 N·m, Mounting: 6 N·m.
Features
MBN1200D33A features: (1)High thermal fatigue durability (delta Tc=70℃,N>20,000cycles); (2)Low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).
Diagrams
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 MBN1200D33A |
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Negotiable |
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MBN1.00SV |
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1" TIN COPPER TUBE SLEEVING 100' |
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MBN1.00SV50 |
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1" TIN COPPER TUBE SLEEVING 50' |
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MBN1200D33A |
Other |
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Data Sheet |
Negotiable |
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